2023-07-19
06:15 |
Design and Performance of HV CMOS Sensors for Future Colliders by the RD50 Collaboration
/ Sonneveld, Jory (NIKHEF, Amsterdam)
/RD50 Collaboration
The CERN RD50 collaboration develops depleted monolithic active pixel CMOS sensors for future colliders with the aim of high radiation tolerance, good time resolution, and high granularity pixel detectors. The most recent prototype, the RD50-MPW3, is a 150 nm High Voltage CMOS LFoundry chip that features pixels with a 62 $\mu$m pitch that integrate both digital and analog readout electronics inside the sensing diodes. [...]
arXiv:2307.08600.-
2024 - 12 p.
- Published in : JPS Conf. Proc. 42 (2024) 011022
Fulltext: document - PDF; 2307.08600 - PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011022
|
Подробная запись - Подобные записи
|
2023-06-09
06:03 |
Подробная запись - Подобные записи
|
2023-06-09
04:38 |
RD50-MPW3: a fully monolithic digital CMOS sensor for future tracking detectors
/ Sieberer, Patrick (OAW, Vienna) ; Zhang, Chenfan (Liverpool U.) ; Bergauer, Thomas (OAW, Vienna) ; Mohr, Raimon Casanova (Barcelona, IFAE) ; Irmler, Christian (OAW, Vienna) ; Karim, Nissar (Liverpool U.) ; de Cos, Jose Mazorra (Valencia U., IFIC) ; Pilsl, Bernhard (OAW, Vienna) ; Vilella, Eva (Liverpool U.)
/CERN-RD50 Collaboration
The CERN-RD50 CMOS working group develops the RD50-MPWseries of monolithic high-voltage CMOS pixel sensors for potential use in future high luminosity experiments such as the HL-LHC and FCC-hh. In this contribution, the design of the latest prototype in this series, RD50-MPW3, is presented. [...]
arXiv:2211.11244.-
2023-02-28 - 7 p.
- Published in : JINST 18 (2023) C02061
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02061
|
Подробная запись - Подобные записи
|
2022-08-10
08:45 |
Подробная запись - Подобные записи
|
2022-08-10
08:45 |
Подробная запись - Подобные записи
|
2021-01-22
04:13 |
Подробная запись - Подобные записи
|
2020-12-16
06:02 |
LGAD and 3D as Timing Detectors
/ Ugobono, Sofia Otero (Barcelona, Inst. Microelectron.)
/RD50 Collaboration
In view of the High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC), radiation tolerant silicon sensors are being developed in the framework of ATLAS, CMS, RD50 and other sensor R\&D; projects. The HL-LHC beam parameters and hardware configuration should enable the collider to reach a peak instantaneous luminosity of $5\times10^{34}\textrm{ cm}^{-2}\textrm{s}^{-1}$, and an integrated luminosity of 250 fb$^{-1}/\textrm{year}$ with the goal of 3000 fb$^{-1}$ after about 12 years of operation. [...]
SISSA, 2019 - 13 p.
- Published in : PoS Vertex2019 (2019) 035
Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.035
|
Подробная запись - Подобные записи
|
2020-12-16
06:02 |
Radiation-tolerant Silicon Detectors for the LHC Phase-II Upgrade and Beyond: Review of RD50 Activities
/ Ott, Jennifer (Helsinki U. ; Helsinki U. of Tech.)
/RD50 Collaboration
At the LHC Phase-II Upgrade foreseen for 2027, the particle densities and radiation levels will increase by roughly an order of magnitude compared to the present LHC conditions, and the silicon-based inner tracking systems have to be able to withstand fluences of up to 2$\times$ 16$^{16}$ n$_{eq}$/cm$^{2}$. To mitigate the increased pileup at the HL-LHC, dedicated timing detectors are employed.Within the CERN RD50 Collaboration, a large RD program has been underway for more than a decade across experimental boundaries to develop silicon sensors with sufficient radiation tolerance for HL-LHC tracking and timing detectors. [...]
SISSA, 2020 - 14 p.
- Published in : PoS Vertex2019 (2020) 028
Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.028
|
Подробная запись - Подобные записи
|
2020-07-28
06:23 |
Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
/ Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221
|
Подробная запись - Подобные записи
|
2020-07-25
06:39 |
Development of RD50-MPW2: a high-speed monolithic HV-CMOS prototype chip within the CERN-RD50 collaboration
/ Zhang, Chenfan (Liverpool U. ; Fond. Bruno Kessler, Trento) ; Casse, Gianluigi (Liverpool U. ; Fond. Bruno Kessler, Trento) ; Massari, Nicola (Fond. Bruno Kessler, Trento) ; Vilella, Eva (U. Liverpool (main)) ; Vossebeld, Joost (U. Liverpool (main))
The CERN-RD50 collaboration has ongoing research to further develop monolithic High Voltage-CMOS (HV-CMOS) sensors in a 150 nm process for future particle physics experiments. As a part of this research programme, a test chip (RD50-MPW2) that implements new methodologies for low leakage current and fast and low-noise readout circuitry has been designed and submitted for fabrication. [...]
SISSA, 2020 - 5 p.
- Published in : PoS TWEPP2019 (2020) 045
Fulltext: PDF;
In : TWEPP 2019 Topical Workshop on Electronics for Particle Physics, Santiago De Compostela, Spain, 2 - 6 Sep 2019, pp.045
|
Подробная запись - Подобные записи
|
|
|